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W3H64M72E-XSBX Datasheet, PDF (26/30 Pages) White Electronic Designs Corporation – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
White Electronic Designs
W3H64M72E-XSBX
ADVANCED*
AC TIMING PARAMETERS (continued)
-55°C ≤ TA < +125°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
Parameter
Symbol
533Mbs CL4
Min
Max
400Mbs CL3
Unit
Min
Max
DQ hold skew factor
tQHS
-
400
-
450
ps
DQ output access time from CK/CK#
tAC
-500
+500
-600
+600
ps
Data-out high impedance window from CK/CK#
DQS Low-Z window from CK/CK#
tHZ
tLZ1
tAC(MN)
tAC(MAX)
tAC(MAX)
tAC(MN)
tAC(MAX)
ps
tAC(MAX)
ps
DQ Low-Z window from CK/CK#
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
tLZ2
2*tAC(MN)
tAC(MAX)
2*tAC(MN)
tAC(MAX)
ps
tDSa
350
400
ps
tDHa
350
400
ps
tDSb
100
150
ps
tDHb
225
275
ps
tDIPW
0.35
0.35
ps
Data hold skew factor
tQHS
400
450
ps
DQ-DQS hold, DQS to first DQ to go nonvalid, per access
tQH
tHP - tQHS
tHP - tQHS
ps
Data valid output window (DVW)
tDVW
tQH - tDQSQ
tQH - tDQSQ
ns
DQS input high pulse width
tDQSH
0.35
0.35
tCK
DQS input low pulse width
tDQSL
0.35
0.35
tCK
DQS output access time fromCK/CK#
tDQSCK
-450
+450
-500
+500
ps
DQS falling edge to CK rising - setup time
tDSS
0.2
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
0.2
tCK
DQS-DQ skew, DOS to last DQ valid, per group, per access tDQSQ
300
350
ps
DQS read preamble
DQS read postamble
DQS write preamble setup time
tRPRE
0.9
1.1
0.9
1.1
tCK
tRPST
0.4
0.6
0.4
0.6
tCK
tWPRES
0
0
ps
DQS write preamble
tWPRE
0.25
0.25
tCK
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Positive DQS latching edge to associated clock edge
tDQSS
-0.25
0.25
-0.25
0.25
tCK
Write command to first DQS latching transition
WL-TDQSS
WL+TDQSS
WL-TDQSS
WL+TDQSS
tCK
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 1
26
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com