VG37648041AT Datasheet, PDF(76/86 Page) Vanguard International Semiconductor – 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

VG37648041AT Datasheet, PDF (76/86 Pages) Vanguard International Semiconductor – 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM

◁

VIS

Preliminary

VG37648041AT

256M:x4, x8, x16

CMOS Synchronous Dynamic RAM

INITIALIZE AND LOAD MODE REGISTERS

VDD

VDDQ

VTT

(system*)

VREF

CLK#

CLK

tVTD

CKE

LVCMOS LOW LEVEL

tCK

tCH tCL

tIS tIH

COMMAND

NOP

PRE

LMR

PRE

ACT

A0,A9,

A11,A12

A10

BA0,BA1

DQS

tIS tIH

CODE CODE

ALL BANKS

CODE CODE

tIS tIH tIS tIH

tIS tIH

BA0=H,

BA0=L,

BA1=L

High-Z

T=200 Âµs

Power-up:

VDD and

CLK stable

tMRD

Load

200

cycles

tRP

of CLK...

tRC

Extended

Mode

Load

Base

Mode

DONTâ CARE

UNDEFINED

â¢=VTT is not applied directly to the device, however tVTD must be greater than or equal to

zero to avoid device latch-up.

â¢â¢=t MRD is required before any command can be applied, and 200 cycles of CLK are required before a

READ command can be applied.

Document : 1G5-0157

Rev.1

Page 76

▷