VG36648041CT Datasheet, PDF (59/70 Pages) Vanguard International Semiconductor – CMOS Synchronous Dynamic RAM

VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Auto Precharge after Write Burst (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK
CKE ^High
CS
Start Auto Precharge
Bank B (Bank D)
Start Auto
Precharge
Bank A
Start Auto Precharge
Bank B (Bank D)
RAS
CAS
WE
BS
A10
Ra
Ra
Rb
ADD
Ra
Ca Ra
Ca
DQM
Cb
Rb ^RBb
Cb
Hi-Z
DQ
Activate
Command
Bank A
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3
QBb0 QBb1 QBb2 QBb3
Activate
Command
Bank B
(Bank D)
Read
Command
Bank A
Read with
Auto Precharge
Command
Bank B (Bank D)
Read with
Auto Precharge
Command
Bank A
Activate
Command
Bank B
(Bank D)
Write with
Auto precharge
Command
Bank B (Bank D)
Document : 1G5-0153
Rev.1
Page 59