VG3617161DT Datasheet, PDF (47/70 Pages) Vanguard International Semiconductor – 16Mb CMOS Synchronous Dynamic RAM

VIS
Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
Random Row Read (Interleaving Banks) (2 of 2)
Burst Length=8, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
t
CK3
CS
RAS
CAS
WE
A11(BS)
A10
RBa
RAa
RBb
A0~A9
RBa
CBa
DQM
t
RCD
DQ
Hi-Z
RAa
CAa
t
AC3
RBb
CBb
tRP
QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBb0
Activate
Command
Bank B
Read
Command
Bank B
Activate
Command
Bank A
Read Precharge
Command ^Command
Bank A ^{Bank B}
Activate
Command
Bank B
Read Precharge
Command Command
Bank B Bank B
Document:1G5-0160
Rev.1
Page 47