VG36128401BT Datasheet, PDF (23/68 Pages) Vanguard International Semiconductor – CMOS Synchronous Dynamic RAM

VIS
VG36128401BT / VG36128801BT / VG36128161BT
CMOS Synchronous Dynamic RAM
READ to WRITE Command Interval
CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Read
Write
DQM
DQ
Hi-Z
D0
D1
D2
D3
1 cycle
CLK
Command
DQM
DQ
Burst length=8, CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Read
Write
Q0
Q1
Q2
D0
D1
D2
Hi-Z is
necessary
CLK
Command
DQM
DQ
example: Burst length=4, CAS latency=3
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read
Write
Q2
Hi-Z is
D0
D1
D2
necessary
Document :1G5-0183
Rev.1
Page 23