SIA777EDJ Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel for Level Shift Load Switch

New Product
SiA777EDJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
1.4
I_D = 4.9 A
6
V_DS = 10 V
1.3
V_GS = 4.5 V; I_D = 3.8 A
V_GS = 2.5 V; I_D = 3.8 A
1.2
4
V_DS = 3 V
2
V_DS = 9.6 V
1.1
V_GS = 1.8 V; I_D = 1 A
1.0
V_GS = 1.5 V; I_D = 1 A
0.9
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
100
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
10
T_J = 150 °C
1
T_J = 25 °C
0.16
0.12
I_D = 1 A; T_J = 125 °C
I_D = 3.8 A; T_J = 125 °C
0.08
I_D = 3.8 A; T_J = 25 °C
0.04
I_D = 1 A; T_J = 25 °C
0.1
0.0
0.5
1.0
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.7
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.6
15
0.5
I_D = 250 µA
10
0.4
5
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
Document Number: 65371
S09-2032-Rev. A, 05-Oct-09
www.vishay.com
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