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SIA777EDJ Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel for Level Shift Load Switch
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SiA777EDJ
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 3 V
VDS = 0 V, VGS = ± 4.5 V
VDS = 0 V, VGS = ± 6 V
VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 1.6 A
VGS = - 4.5 V, ID = - 3.8 A
VGS = 2.5 V, ID = 1.5 A
VGS = - 2.5 V, ID = - 3.3 A
VGS = 1.8 V, ID = 1.3 A
VGS = - 1.8 V, ID = 2.6 A
VGS = 1.5 V, ID = 0.3 A
VGS = - 1.5 V, ID = 1 A
VDS = 10 V, ID = 1.6 A
VDS = - 10 V, ID = - 3.8 A
VDS = 10 V, VGS = 5 V, ID = 1.7 A
Qg
VDS = - 6 V, VGS = - 8 V, ID = - 4.9 A
Gate-Source Charge
Gate-Drain Charge
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
Qgs
P-Channel
Qgd
VDS = - 6 V, VGS = - 4.5 V, ID = - 4.9 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 12
0.4
- 0.4
4
- 10
40
2
Typ. Max. Unit
V
21
-3
- 2.3
2.3
mV/°C
1.0
V
-1
±1
µA
± 0.5
± 1 mA
±3
1
-1
µA
10
- 10
A
0.183 0.225
0.047 0.057
0.220 0.270
0.063 0.077
Ω
0.275 0.345
0.095 0.115
0.320 0.960
0.125 0.200
3.5
S
11
1.3 2.2
7.5
12
1.1 1.7
5
8
nC
0.2
0.6
0.1
1.8
200 400
Ω
10
20
www.vishay.com
2
Document Number: 65371
S09-2032-Rev. A, 05-Oct-09
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