SI5515CDC Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.18
0.15
Si5515CDC
Vishay Siliconix
I_D = - 3.1 A
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.7
0.6
I_D = 250 µA
0.5
0.4
0.3
0.12
0.09
0.06
T_J = 125 °C
T_J = 25 °C
0.03
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
30
20
10
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
10^-4 10^-3 10^-2 10^-1
1
10
Time (s)
Single Pulse Power
100 1000
Limited by R_DS(on)*
10
100 µs
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS
Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
www.vishay.com
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