SI5515CDC Datasheet, PDF (4/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
4
V_GS = 5 thru 2 V
16
3
V_GS = 1.5 V
12
2
8
T_C = 25 °C
4
0
0
0.075
V_GS = 1 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1
0
0.0
1000
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.060
0.045
0.030
0.015
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 6 A
4
V_DS = 10 V
3
V_DS = 16 V
2
1
800
C_iss
600
400
200
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 2.5 V, I_D = 5.6 A
1.5
1.2
V_GS = 4.5 V, I_D = 6 A
0.9
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68747
S-81545-Rev. A, 07-Jul-08