SI4599DY Datasheet, PDF (9/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.20
10
0.16
T_J = 150 °C
1
T_J = 25 °C
0.12
Si4599DY
Vishay Siliconix
I_D = 5 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
I_D = 250 µA
0.4
0.2
I_D = 1 mA
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.08
T_J = 125 °C
0.04
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
10 Limited by R_DS(on)*
1 ms
1
10 ms
0.1
0.01
0.01
T_C = 25 °C
Single Pulse
0.1
1
100 ms
10 s
1s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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