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| SI4599DY Datasheet, PDF (1/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET | |||
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New Product
Si4599DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
40
- 40
RDS(on) (Ω)
0.0355 at VGS = 10 V
0.0425 at VGS = 4.5 V
0.045 at VGS = - 10 V
0.062 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
6.8
5.3
6.2
- 5.8
11.8
- 5.0
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
⢠Halogen-free
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % UIS Tested
APPLICATIONS
⢠Backlight Inverter for LCD Display
⢠Full Bridge Converter
D1
G2
G1
RoHS
COMPLIANT
S2
Top View
Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
- 40
V
VGS
± 20
TC = 25 °C
6.8
- 5.8
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
5.4
5.6b, c
- 4.7
- 4.7b, c
TA = 70 °C
4.4b, c
- 3.7b, c
Pulsed Drain Current
IDM
20
- 20
A
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
2.5
1.6b, c
- 2.5
- 1.6b, c
Pulsed Source-Drain Current
ISM
20
- 20
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IAS
L = 0 1 mH
EAS
7
2.45
- 10
5
mJ
TC = 25 °C
3.0
3.1
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.9
2.0b, c
2
W
2.0b, c
TA = 70 °C
1.25b, c
1.25b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ⤠10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Symbol
RthJA
RthJF
N-Channel
Typ.
Max.
54
64
33
42
P-Channel
Typ.
Max.
49
62.5
30
40
Unit
°C/W
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
www.vishay.com
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