SI4561DY Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.12
0.09
Si4561DY
Vishay Siliconix
I_D = 5 A
T_J = 150 °C
T_J = 25 °C
10
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.7
0.06
T_A = 125 °C
0.03
T_A = 25 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.5
80
I_D = 250 µA
0.3
60
I_D = 5 mA
0.1
40
- 0.1
20
- 0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
1
10 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
100 ms
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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