SI4561DY Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
V_GS = 10 thru 4 V
24
4
18
12
3V
6
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.050
3
T_C = 25 °C
2
1
0
0
2500
T_C = 125 °C
1
2
T_C = - 55 °C
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.044
0.038
V_GS = 4.5 V
2000
C_iss
1500
0.032
0.026
V_GS = 10 V
0.020
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 5 A
8
V_DS = 10 V
V_DS = 20 V
6
V_DS = 30 V
4
2
0
0
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8
8
16
24
32
40
Q_g - Total Gate Charge (nC)
Gate Charge
1000
500
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.6
V_GS = 10 V
1.4
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09