English
Language : 

SIA517DJ Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET
New Product
SiA517DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
VGS = 5 V thru 2.5 V
12
4
VGS = 2 V
9
3
6
VGS = 1.5 V
3
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.30
0.25
VGS = 1.5 V
0.20
VGS = 1.8 V
0.15
0.10
VGS = 2.5 V
0.05
VGS = 4.5 V
0.00
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 4.5 A
6
VDS = 6 V
4
VDS = 9.6 V
2
0
0
www.vishay.com
8
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
2
TC = 25 °C
TC = 125 °C
1
TC = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
1000
800
Ciss
600
400
Coss
Crss
200
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
VGS = 4.5 V, 2.5 V; ID = 3.6 A
1.2
VGS = 1.8 V; ID = 1 A
1.1
VGS = 1.5 V; ID = 1 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64832
S09-0861-Rev. A, 18-May-09