SIA517DJ Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 12-V (D-S) MOSFET

SiA517DJ
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = - 250 µA
V_DS Temperature Coefficient
ΔV_DS/T_J
I_D = 250 µA
I_D = - 250 µA
V_GS(th) Temperature Coefficient
ΔV_GS(th)/T_J
I_D = 250 µA
I_D = - 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = - 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
I_DSS
I_D(on)
R_DS(on)
g_fs
V_DS = 12 V, V_GS = 0 V
V_DS = - 12 V, V_GS = 0 V
V_DS = 12 V, V_GS = 0 V, T_J = 55 °C
V_DS = - 12 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 4.5 V
V_DS ≤ - 5 V, V_GS = - 4.5 V
V_GS = 4.5 V, I_D = 5 A
V_GS = - 4.5 V, I_D = - 3.6 A
V_GS = 2.5 V, I_D = 4.6 A
V_GS = - 2.5 V, I_D = - 3.2 A
V_GS = 1.8 V, I_D = 4.1 A
V_GS = - 1.8 V, I_D = - 1 A
V_GS = 1.5 V, I_D = 2 A
V_GS = - 1.5 V, I_D = - 1 A
V_DS = 10 V, I_D = 5 A
V_DS = - 10 V, I_D = - 3.6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
N-Channel
V_DS = 6 V, V_GS = 0 V, f = 1 MHz
P-Channel
V_DS = - 6 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 6 V, V_GS = 8 V, I_D = 6.5 A
Q_g
V_DS = - 6 V, V_GS = - 8 V, I_D = - 4.5 A
N-Channel
V_DS = 6 V, V_GS = 4.5 V, I_D = 6.5 A
Q_gs
P-Channel
Q_gd
V_DS = - 6 V, V_GS = - 4.5 V, I_D = - 4.3 A
Gate Resistance
R_g
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
12
- 12
0.4
- 0.4
15
- 10
0.7
2
Typ. Max. Unit
V
12
- 3.1
- 2.5
2.4
mV/°C
1
V
-1
± 100
nA
± 100
1
-1
µA
10
- 10
A
0.024 0.029
0.050 0.061
0.028 0.034
0.066 0.081
Ω
0.032 0.044
0.093 0.115
0.042 0.065
0.112 0.170
21
S
11
500
590
160
pF
280
100
250
9.7
15
13.1 20
5.6 8.5
8.2 12.5 _nC
0.72
1.2
0.74
2.8
3.5
7
Ω
10
20
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Document Number: 64832
S09-0861-Rev. A, 18-May-09