SI6562CDQ Datasheet, PDF (8/17 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFETs

Si6562CDQ
Vishay Siliconix
New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
V_GS = 5 thru 3 V
25
V_GS = 2.5 V
20
15
10
V_GS = 2 V
5
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
4
2
0
0.0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.10
1500
0.08
C_iss
1200
0.06
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 5.1 A
8
6
V_DS = 10 V
V_DS = 16 V
4
2
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
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8
900
600
C_oss
300
C_rss
0
02
4 6 8 10 12 14 16 18 20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
1.4 ID = 5.1 A
1.3
V_GS = 4.5 V, 2.5 V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68954
S-82575-Rev. A, 27-Oct-08