SI6562CDQ Datasheet, PDF (1/17 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFETs

New Product
Si6562CDQ
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.022 at V_GS = 4.5 V
N-Channel 20
0.036 at V_GS = 2.5 V
P-Channel
0.030 at V_GS = - 4.5 V
- 20
0.045 at V_GS = - 2.5 V
I_D (A)
6.7^a
5.2^a
- 6.1^a
- 5.0^a
Q_g (Typ.)
6.7 nC
17 nC
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFETs
APPLICATIONS
• Load Switch
• DC/DC Converter
RoHS
COMPLIANT
D₁ 1
S_{1 2}
S_{1 3}
G_{1 4}
TSSOP-8
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information: Si6562CDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
- 20
V
V_GS
± 12
T_C = 25 °C
6.7
- 6.1
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
4.2
5.7^{b, c}
- 4.9
- 5.1^{b, c}
T_A = 70 °C
4.5^{b, c}
- 4.1^{b, c}
A
Pulsed Drain Current
I_DM
30
- 30
Source Drain Current Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
1.3
0.9^{b, c}
- 1.4
- 1.0^{b, c}
T_C = 25 °C
1.6
1.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.0
1.1^{b, c}
1.1
1.2^{b, c}
W
T_A = 70 °C
0.7^{b, c}
0.76^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 145 °C/W.
Symbol
R_thJA
R_thJF
N-Channel
Typ. Max.
85
110
62
80
P-Channel
Typ. Max.
81
105
57
75
Unit
°C/W
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
www.vishay.com
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