SI5504BDC_10 Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 30 V (D-S) MOSFET

Si5504BDC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
V_GS = 10 V thru 5 V
8
4
6
4V
4
2
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
3
2
T_C = 125 °C
1
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
250
0.3
V_GS = 4.5 V
0.2
V_GS = 10 V
0.1
0.0
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 2.5 A
8
V_DS = 15 V
6
V_DS = 24 V
4
2
0
0
1
2
3
4
5
Q_g - Total Gate Charge (nC)
Gate Charge
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8
200
C_iss
150
100
50
0
0
C_oss
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 4.5 V, 10 V
I_D = 2.2 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74483
S10-0547-Rev. B, 08-Mar-10