SI4618DY_09 Datasheet, PDF (8/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4618DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
5
V_GS = 10 V thru 5 V
40
4
30
3V
20
10
0
0.0
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.012
0.011
0.010
V_GS = 4.5 V
3
2
T_C = 125 °C
1
T_C = 25 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2800
C_iss
2240
1680
0.009
0.008
V_GS = 10 V
0.007
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 8 A
8
V_DS = 10 V
6
V_DS = 30 V
V_DS = 20 V
4
2
1120
560
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 8 A
V_GS = 10 V
1.5
V_GS = 4.5 V
1.2
0.9
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
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8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09