SI4618DY_09 Datasheet, PDF (5/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
150 °C
0.10
I_D = 8 A
0.08
Si4618DY
Vishay Siliconix
1
0.06
0.1
25 °C
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.04
125 °C
0.02
25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.2
80
- 0.1
- 0.4
- 0.7
60
I_D = 5 mA
40
I_D = 250 µA
20
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
100 ms
0.1
T_A = 25 °C
1s
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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