VS-ST183C Datasheet, PDF (7/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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VS-ST183C Series
Vishay Semiconductors
10 000
1000
100
Snubber circuit
R_s = 47 Ω
C_s = 0.22 µF
V_D = 80 % V_DRM
50 Hz
400 200 100
1000 ⁵⁰⁰
1500
2500
3000
5000
10 000
10
10
ST183C..C Series
Trapezoidal pulse
t_p
T_C = 40 °C
dI/dt = 100 A/µs
100
1000
10 000
Pulse Basewidth (µs)
10 000
1000
Snubber circuit
R_s = 47 Ω
C_s = 0.22 µF
V_D = 80 % V_DRM
50 Hz
1000 ^{500 400 200 100}
1500
2500
3000
100
5000
10 000
10
10
ST183C..C Series
Trapezoidal pulse
t_p
T_C = 55 °C
dI/dt = 100 A/µs
100
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
100 000
10 000
1000
20 joules per pulse
10
24
1
0.5
0.3
0.2
0.1
100
ST183C..C Series
Sinusoidal pulse
t_p
10
10
100
1000
Pulse Basewidth (µs)
10 000
100 000
10 000
1000
100
ST183C..C Series
Rectangular pulse
t_{p dI/dt = 50 A/µs}
2
1
0.3 ^0.5
0.2
0.1
20 joules per pulse
10
4
10
10
100
1000
Pulse Basewidth (µs)
10 000
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t_r ≤ 1 µs
b) Recommended load line for
10
≤ 30 % rated dI/dt: 10 V, 10 Ω
t_r ≤ 1 µs
(a)
(b)
(1) P_GM = 10 W, t_p = 20 ms
(2) P_GM = 20 W, t_p = 10 ms
(3) P_GM = 40 W, t_p = 5 ms
(4) P_GM = 60 W, t_p = 3.3 ms
1
0.1
0.001
V_GD
I_GD
0.01
(1) (2) (3) (4)
Device: ST183C..C Series
Frequency limited by P_G(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Revision: 17-Dec-13
7
Document Number: 94368
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