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VS-ST183C Datasheet, PDF (2/11 Pages) Vishay Siliconix – Inverter Grade Thyristors
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CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ITM
180° el
770
660
730
600
600
490
350
270
50
VDRM
50
40
55
47/0.22
VS-ST183C Series
Vishay Semiconductors
ITM
180° el
1220
1160
1270
1090
1210
1040
860
730
50
VDRM
-
40
55
47/0.22
ITM
100 µs
5450
4960
2760
2420
1600
1370
800
680
50
VDRM
-
40
55
47/0.22
UNITS
A
V
A/μs
°C
μF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current 
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle, 
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I2t
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage 
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage 
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
ITM = 600 A, TJ = TJ maximum, 
tp = 10 ms sine wave pulse
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
(I >  x IT(AV)), TJ = TJ maximum
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
(I >  x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
VALUES
370 (130)
55 (85)
690
4900
5130
4120
4310
120
110
85
78
1200
1.80
1.40
1.45
0.67
0.58
600
1000
UNITS
A
°C
A
kA2s
kA2s
V
m
mA
Revision: 17-Dec-13
2
Document Number: 94368
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