VS-SD703CL Datasheet, PDF (7/11 Pages) Vishay Siliconix – Optimized turn-on and turn-off characteristics

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450
400
I_FM = 1000 A
Sine Pulse
350
500 A
300
150 A
250
200
150
100
SD703C..S20L Series
T_J = 150 °C; Vr > 100V
50
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
7
6.5
SD703C..S30L Series
T_J = 150 °C; Vr > 100V
6
5.5
5
I_FM = 1000 A
Sine Pulse
4.5
500 A
4
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fa ll Of Forward Current - di/d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
1100
1000
900
I _FM = 1000 A
Sine Pulse
800
700
500 A
600
500
150 A
400
300
200
SD703C..S30L Series
T_J= 150 °C; Vr > 100V
100
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
VS-SD703C..L Series
Vishay Semiconductors
550
500
I _FM= 1000 A
Sine Pulse
450
500 A
400
150 A
350
300
250
200
150
100
SD703C..S30L Series
TJ = 150 °C; Vr > 100V
50
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 27 - Recovery Current Characteristics
1E4
1 ^{2 4 6 10 joules per pulse}
0.6
0.4
0.2
1E3
0.1
0.08
1E2
1E1
SD703C..S20L Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
tp
d v/ d t = 1000V/ µs
1E2
1E3
Pulse Basewidth (µs)
1E4
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
2000 ¹⁰⁰⁰ 600 400 _{200 100 50 Hz}
3000
4000
6000
10000
15000
20000
SD703C..S20L Series
Sinusoid al Pulse
TC= 55°C, V_RRM = 800V
tp
d v/ d t = 1000V/ us
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
Revision: 04-Apr-14
7
Document Number: 93179
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