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| VS-SD703CL Datasheet, PDF (2/11 Pages) Vishay Siliconix – Optimized turn-on and turn-off characteristics | |||
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VS-SD703C..L Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current ï
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forwardï
slope resistance
High level value of forwardï
slope resistance
Maximum forward voltage drop
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
I2ït
VF(TO)1
VF(TO)2
rf1
TEST CONDITIONS
180° conduction, half sine waveï
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRMï
reapplied
No voltage
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
100 % VRRMï
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
(I > ï° x IF(AV)), TJ = TJ maximum
SD703C..L
s20
s30
700 (365) 790 (400)
55 (85) 55 (85)
1320
1470
9300
9600
9730
10 050
7820
8070
8190
8450
432
460
395
420
306
326
279
297
4320
4600
1.00
0.95
1.11
1.05
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum 0.80
0.60
rf2
(I > ï° x IT(AV)), TJ = TJ maximum
VFM
Ipk = 1500 A, TJ = TJ maximum,ï
tp = 10 ms sinusoidal wave
0.76
0.56
2.20
1.85
UNITS
A
°C
A
kA2s
kA2ïs
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 150 °C
CODE
trr AT 25 % IRRM
Ipk
SQUARE dI/dt
Vr
trr AT 25 % IRRM
Qrr
Irr
(μs)
PULSE (A/μs) (V)
(μs)
(μC)
(A)
(A)
S20
2.0
S30
3.0
3.5
1000
50
- 50
5.0
240
110
380
130
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum junction operatingï
and storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,ï
case junction to heatsink
RthJ-hs
DC operation single side cooled
DC operation double side cooled
0.092
K/W
0.046
Mounting force, ± 10 %
9800
N
(1000)
(kg)
Approximate weight
250
g
Case style
See dimensions - link at the end of datasheet DO-200AB (B-PUK)
ïRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.011
0.011
120°
0.013
0.014
90°
0.017
0.017
60°
0.024
0.025
30°
0.043
0.043
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.008
0.008
0.013
0.013
0.018
0.018
0.026
0.026
0.043
0.044
TEST CONDITIONS
TJ = TJ maximum
UNITS
K/W
Note
⢠The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 04-Apr-14
2
Document Number: 93179
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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