VS-SD1053CL Datasheet, PDF (7/11 Pages) Vishay Siliconix – Optimized turn-on and turn-off characteristics

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500
450
IFM= 1500 A
Sine Pulse
400
1000 A
350
500 A
300
250
200
150
100
SD1053C..S20L Series
50
T_J= 150 °C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fa ll Of Forward Current - d i/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
9
8.5
SD1053C..S30L Series
T_J= 150 °C; V _r > 100V
8
7.5
7
6.5
6
I_FM = 1500 A
5.5
Sine Pulse
5
1000 A
4.5
500 A
4
3.5
10
100
1000
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 25 - Recovery Time Characteristics
1600
1400
1200
1000
I_FM = 1500 A
Sine Pulse
1000 A
500 A
800
600
400
200
0
0
SD1053C..S30L Series
T_J= 150°C; Vr > 100V
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
VS-SD1053C..L Series
Vishay Semiconductors
700
I_FM = 1500 A
600
Sine Pulse
1000 A
500
500 A
400
300
200
100
SD1053C..S30L Series
T_J= 150°C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 27 - Recovery Current Characteristics
1E4
1
0.6
10 joulesp er pulse
6
4
2
0.4
1E3
0.2
0.08
1E2
1E1
SD1053C..S20L Series
Sinusoidal Pulse
T_J = 150°C, VRRM = 800V
tp
dv/ dt = 1000V/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
2000
3000
4000
6000
1000 400 200 100 ^{50 Hz}
1E3
10000
SD1053C..S20L Se ries
15000
20000
Sinusoida l Pulse
T_C= 55°C, V_RRM = 800V
tp
dv/ d t = 1000V/ us
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
Revision: 15-Feb-17
7
Document Number: 93167
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