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| VS-SD1053CL Datasheet, PDF (2/11 Pages) Vishay Siliconix – Optimized turn-on and turn-off characteristics | |||
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VS-SD1053C..L Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current ï
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forwardï
slope resistance
High level value of forwardï
slope resistance
Maximum forward voltage drop
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
I2ït
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine waveï
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
100 % VRRMï
reapplied
No voltage
Sinusoidal half wave,ï
initial TJ = TJ maximum
t = 8.3 ms reapplied
t = 10 ms 100 % VRRMï
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
(I > ï° x IF(AV)), TJ = TJ maximum
SD1053C..L
S20
S30
1050 (450) 920 (390)
55 (85) 55 (85)
1940
1700
15 000 13 000
15 700 13 610
12 620 10 930
13 210 11 450
1125
845
1027
772
796
598
727
546
11 250
8450
1.34
1.51
1.48
1.67
UNITS
A
°C
A
kA2s
kA2ïs
V
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
(I > ï° x IF(AV)), TJ = TJ maximum
0.37
0.33
0.50
mï
0.45
Ipk = 1500 A, TJ = TJ maximum, ï
tp = 10 ms sinusoidal wave
1.90
2.26
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
trr AT 25 % IRRM
(μs)
TEST CONDITIONS
Ipk
SQUARE dI/dt
Vr
PULSE (A/μs) (V)
(A)
S20
2.0
S30
3.0
1000
100
- 50
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
Qrr
Irr
(μs)
(μC)
(A)
4.0
400
180
4.5
550
230
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operatingï
and storage temperature range
TJ, TStg
Maximum thermal resistance,ï
case junction to heatsink
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 150
°C
0.073
K/W
0.031
14 700 (1500)
N (kg)
255
g
DO-200AB (B-PUK)
ïRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.009
0.008
120°
0.011
0.011
90°
0.014
0.014
60°
0.020
0.021
30°
0.036
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.006
0.006
0.011
0.011
0.015
0.015
0.021
0.022
0.036
0.036
TEST CONDITIONS
TJ = TJ maximum
UNITS
K/W
Note
⢠The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 15-Feb-17
2
Document Number: 93167
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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