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SI1555DL_08 Datasheet, PDF (7/8 Pages) Vishay Siliconix – Complementary Low-Threshold MOSFET Pair
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Si1555DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
P−CHANNEL
0.2
0.1
0.1 0.05
0.02
0.01
10−4
Single Pulse
10−3
2
1
Duty Cycle = 0.5
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 400_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71079.
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
www.vishay.com
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