SI1555DL_08 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary Low-Threshold MOSFET Pair

Si1555DL
Vishay Siliconix
Complementary Low-Threshold MOSFET Pair
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
N-Channel
P-Channel
0.385 @ V_GS = 4.5 V
20
0.630 @ V_GS = 2.5 V
0.600 @ V_GS = −4.5 V
−8
0.850 @ V_GS = −2.5 V
1.200 @ V_GS = −1.8 V
I_D (A)
0.70
0.54
−0.60
−0.50
−0.42
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Top View
FEATURES
D TrenchFETr Power MOSFET
Pb-free
Available
Marking Code
RB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1555DL-T1
Si1555DL-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
"12
−8
V
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 85_C
I_D
I_DM
"0.70
"0.50
"0.66
"0.48
−0.60
−0.43
"1.0
−0.57
−0.41
A
Continuous Source Current (Diode Conduction)^a
I_S
0.25
0.23
−0.25
−0.23
Maximum Power Dissipation^a
T_A = 25_C
0.30
0.27
0.30
0.27
T_A = 85_C
P_D
0.16
0.14
0.16
W
0.14
Operating Junction and Storage Temperature Range
T_J, T_stg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
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