DG308B_11 Datasheet, PDF (7/15 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

TEST CIRCUITS
V_S = + 3 V
12 V
+ 15 V
V+
S
D
IN
GND
V-
- 15 V
V_O = V_S
12 V
Logic
Input
V_O
0V
R_L
1 k
C_L
35 pF
Switch
Output
V_O
R_L
R_L + R_DS(on)
Figure 2. Switching Time
DG308B, DG309B
Vishay Siliconix
50 %
t_r < 20 ns
t_f < 20 ns
t_OFF
90 %
t_ON
+ 15 V
C
V_S
R_g = 50 
0 V, 15 V
V+
S
D
IN
GND
V-
C
V_S
Off Isolation = 20 log
V_O
- 15 V
Figure 3. Off Isolation
V_O
50 
C
+ 15 V
V+
V_S
S₁
D₁
R_g= 50 
IN₁
0 V, 15 V
S₂
D₂
NC
0 V, 15 V
IN₂
GND
C = RF bypass
V_S
X_{TA LK} Isolation = 20 log
V_O
V-
C
- 15 V
Figure 4. Channel-to-Channel Crosstalk
50 
V_O
50 
R_g
V_g
12 V
+ 15 V
V+
S
D
IN
GND
V-
- 15 V
V_O
C_L
1000 pF
V_O
V_O
IN_X ON
OFF
ON
V_O = measured voltage error due to charge injection
The charge injection in coulombs is Q = C_L x V_O
Figure 5. Charge Injection
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
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