DG308B_11 Datasheet, PDF (4/15 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

DG308B, DG309B
Vishay Siliconix
SPECIFICATIONS^a (for Single Supply)
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source
On-Resistance
Symbol
V_ANALOG
R_DS(on)
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V_IN = 11 V, 3.5 V^f
V_D = 3 V, 8 V, I_S = 1 mA
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.^b Typ.^c Min.^d Max.^d Min.^d Max.^d Unit
Full
Room 90
Full
0
12
0
12 V
160
200
160
200

Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supply
t_ON
t_OFF
V_S = 8 V, see figure 2
Room
Room
Q
C_L = 1 nF, V_gen = 6 V, R_gen = 0  Room
4
300
300
ns
200
200
pC
Positive Supply Current
I+
Negative Supply Current
I-
Power Supply Range for
Continuous Operation
V_OP
V_IN = 0 V or 12 V
Room
Full
Room
Full
Full
1
1
5
5
-1
-1
µA
-5
-5
4
44
4
44 V
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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4
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11