VS-ST280S Datasheet, PDF (6/8 Pages) Vishay Siliconix – Center amplifying gate

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VS-ST280S Series
Vishay Semiconductors
100
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
10 _{tr<=1 µs}
(a)
(b)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
1
0.1
0.001
(1) (2) (3) (4)
VGD
IGD
Device: ST280SSeries
Frequenc y Limited by PG(AV)
0.01
0.1
1
10
100
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code _{VS- ST 28 0 S 06 P 0 V}
1
2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
2 ^{- Thyristor}
3 - Essential part number
4 ^{- 0 = Converter grade}
5 - S = Compression bonding stud
6 - Voltage code x 100 = V_RRM (see Voltage Ratings table)
7 - P = Stud base 3/4"-16UNF-2A threads
8 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
9 - V = Glass-metal seal
Note: For metric device M16 x 1.5 contact factory
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95077
Revision: 11-Mar-14
6
Document Number: 94402
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