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VS-ST280S Datasheet, PDF (3/8 Pages) Vishay Siliconix – Center amplifying gate
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VS-ST280S Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
PGM
PG(AV)
IGM
+ VGM
- VGM
DC gate current required to trigger
IGT
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
TEST CONDITIONS
VALUES UNIT
TYP. MAX. S
TJ = TJ maximum, tp  5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp  5 ms
10.0
W
2.0
3.0
A
TJ = TJ maximum, tp  5 ms
20
V
5.0
TJ = - 40 °C
180 -
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
90 150 mA
Maximum required gate trigger/current/
voltage are the lowest value which will 40
-
trigger all units 12 V anode to cathode 2.9
-
applied
1.8 3.0
V
TJ = 125 °C
1.2 -
Maximum gate current/voltage not to
10
mA
TJ = TJ maximum
trigger is the maximum value which will
not trigger any unit with rated VDRM
anode to cathode applied
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
TJ
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.105
K/W
0.04
31 (275) N · m
24.5 (210) (lbf · in)
280
g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
60°
0.036
0.027
0.037
TJ = TJ maximum
K/W
30°
0.060
0.060
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
3
Document Number: 94402
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