VS-ST223C Datasheet, PDF (6/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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VS-ST223C..C Series
Vishay Semiconductors
1E4
1E3
1E2
1E1
Snubb er c ircuit
Rs = 47 ohms
C _s = 0.22 µ F
V _D = 80% V _DRM
1000 500 ^{400 200 100 50 Hz}
1 50 0
2 50 0
3 00 0
5 00 0
1 0 00 0
ST2 23 C.. C Serie s
Sinuso idal pulse
tp
T_C = 40°C
Snubbe r circ uit
R_s = 47 ohms
C _s = 0.22 µF
V D = 80% V _DRM
1000 ^{500 400 200 100 50 Hz}
1 50 0
2 50 0
3 00 0
5 00 0
10 00 0
ST2 23 C.. C Se ries
Sinuso idal pulse
tp
T_C = 55°C
1E2
1E3
1E4
P u lse Ba se w id t h (µ s)
1 E11E 1
1E2
1E3
1E4
P u lse Ba se w id t h (µ s)
Fig. 13 - Frequency Characteristics
1E4
Snu bbe r c irc uit
R _s = 47 ohms
C _s = 0.22 µF
V _D = 80% V _DRM
1E3
2500 ^{1500 1000 500}
3 00 0
5 00 0
400 200 ¹⁰⁰
50 Hz
1E2
10 0 00
1E1
1E1
ST22 3C ..C Se rie s
Tra pe zoidal pulse
tp
T_C = 40°C
di/dt = 5 0A /µ s
1E2
1E3
1E4
P u lse B ase w idt h (µ s)
Snubbe r circ uit
Rs = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
2500 ^{1500 1000 500 400 200 100}
3 00 0
50 Hz
5 00 0
1 00 00
ST2 23 C..C Series
Trape zoidal pulse
tp
T_C = 55°C
di/dt = 50A /µs
1E1
1E2
1E3
1E4
P u lse Ba se w id t h (µ s)
Fig. 14 - Frequency Characteristics
1E4
Snubb er c ircu it
R _s = 47 ohms
C _s = 0 .22 µF
V _D = 80% V _DRM
1E3
1000 500 ^{400 200 100 50 Hz}
1 50 0
25 0 0
3 00 0
5 00 0
1E2
1 00 0 0
ST223 C. .C Se ries
Tra pezo idal pulse
tp
T_C = 40°C
di/d t = 1 00A /µs
Snubbe r circ uit
R_s = 47 ohms
C _s = 0.2 2 µF
V _D = 80% V _DRM
400 ^{200 100 50 Hz}
1500 ^{1000 500}
2 50 0
3 000
5 00 0
10 00 0
ST223 C. .C Se ries
Trap ezo id al p ulse
tp
T_C = 55°C
di/dt = 10 0A /µs
1E1
1E1
1E2
1E 3
1E4
P u lse B ase w id t h (µ s)
1E1
1E 2
1E3
1E4
P u lse Ba se w id t h (µ s)
Fig. 15 - Frequency Characteristics
Revision: 02-Jun-15
6
Document Number: 93672
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