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| VS-ST223C Datasheet, PDF (2/11 Pages) Vishay Siliconix – Inverter Grade Thyristors | |||
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www.vishay.com
VS-ST223C..C Series
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ITM
180° el
930
800
910
770
780
650
490
400
50
VDRM
50
40
55
47/0.22
ITM
180° el
1430
1220
1490
1300
1430
1260
1070
920
50
VDRM
-
40
55
47/0.22
ITM
100 µs
5870
5240
3120
2740
1880
1640
1000
860
50
VDRM
-
40
55
47/0.22
UNITS
A
V
A/μs
°C
ïï¯Î¼F
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state currentï
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle, ï
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I2ït
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
VALUES UNITS
180° conduction, half sine waveï
Double side (single side) cooled
390 (150) A
55 (85)
°C
DC at 25 °C heatsink temperature double side cooled
745
t = 10 ms
t = 8.3 ms
No voltage ï
reapplied
5850
6130
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
No voltage ï
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
100 % VRRMï
reapplied
4920
5150
171
156
121
110
kA2s
t = 0.1 to 10 ms, no voltage reapplied
1710 kA2ïs
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.58
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
1.05
V
(I > ï° x IT(AV)), TJ = TJ maximum
1.09
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
0.88
mï
0.82
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 ï, IG = 1 A
600
mA
1000
SWITCHING
PARAMETER
Maximum non-repetitive rate ï
of rise of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
VALUES
UNITS
MIN. MAX.
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μsï
Resistive load, gate pulse: 10 V, 5 ï source
TJ = TJ maximum, ï
ITM = 300 A, commutating dI/dt = 20 A/μsï
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
0.78
10 30
A/μs
μs
Revision: 02-Jun-15
2
Document Number: 93672
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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