VS-ST180S12P0V Datasheet, PDF (6/8 Pages) Vishay Siliconix – Phase Control Thyristors (Stud Version), 200 A

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VS-ST180SPbF Series
Vishay Semiconductors
100
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Rec ommended load line for
<=30% rated di/ dt : 10V, 10ohms
10 _{tr<=1 µs}
(a)
(b)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
1
0.1
0.001
VGD
IGD
Device: ST180SSeries
(1) (2) (3) (4)
Frequency Limited by PG(AV)
0.01
0.1
1
10
100
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code _{VS- ST 18 0 S 20 P 0 - PbF}
1
2
3
4
5
6
7
8
9 10
1 - Vishay Semiconductors product
2 - Thyristor
3 - Essential part number
4 - 0 = Converter grade
5 - S = Compression bonding stud
6 - Voltage code x 100 = V_RRM (see Voltage Ratings table)
7 - P = Stud base 3/4"-16UNF2A threads
8 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
9 - V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
10 - None = Standard production
- PbF = Lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
Dimensions
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www.vishay.com/doc?95082
Revision: 11-Mar-14
6
Document Number: 94397
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