VS-GT140DA60U Datasheet, PDF (6/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 140 A

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1
VS-GT140DA60U
Vishay Semiconductors
0.1
0.01
0.001
0.0001
1
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t_{2 .}
2. Peak T_J = P_DM x Z_thJC + T_C
.
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance Z_thJC Characteristics, IGBT
0.1
0.01
0.001
0.0001
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t_{2 .}
2. Peak T_J = P_DM x Z_thJC + T_C
.
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance Z_thJC Characteristics, Diode
1000
100
10
1
0.1
0.01
1
10
100
1000
V_CE (V)
Fig. 18 - IGBT Reverse BIAS SOA, T_J = 175 °C, V_GE = 15 V
Revision: 31-May-16
6
Document Number: 94772
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