VS-GT140DA60U Datasheet, PDF (4/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Trench IGBT), 140 A

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VS-GT140DA60U
Vishay Semiconductors
140
120
100
T_J = 175 °C
80
60
40
T_J = 125 °C
20
T_J = 25 °C
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V_GE - Gate-to-Emitter Voltage (V)
Fig. 5 - Typical IGBT Transfer Characteristics
2.4
2.2
I_C = 100 A
2
I_C = 75 A
1.8
1.6
I_C = 50 A
1.4
1.2
I_C = 25 A
1
0 20 40 60 80 100 120 140 160 180
T_J - Junction Temperature (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage
vs. Junction Temperature, V_GE = 15 V
10
T_J = 175 °C
1
0.1
T_J = 125 °C
0.01
0.001
0.0001
T_J = 25 °C
0.00001
0
100 200 300 400 500 600
V_CES - Collector-to-Emitter Voltage (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
5
4.5
T_J = 25 °C
4
3.5
3
2.5
T_J = 125 °C
2
1.5
1
0.20
0.40
0.60
0.80
1.00
I_C (mA)
Fig. 7 - Typical IGBT Threshold Voltage
2.2
2
E_off
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
E_on
0.2
0
10 20 30 40 50 60 70 80 90 100 110 120
I_C - Collector Current (A)
Fig. 9 - Typical IGBT Energy Losses vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V, Diode used: 60APH06
1
t_f
0.1
t_d(on)
t_d(off)
t_r
0.01
0
20
40
60
80 100 120
I_C - Collector Current (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V, Diode used: 60APH06
Revision: 31-May-16
4
Document Number: 94772
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