SIHH28N60E Datasheet, PDF (6/7 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHH28N60E
Vishay Siliconix
Current regulator
Same type as D.U.T.
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 18 - Basic Gate Charge Waveform
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 19 - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
-
+
R_g
• dV/dt controlled by R_g
+
• Driver same type as D.U.T.
• I_SD controlled by duty factor “D”
- ^VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = 10 V^a
D.U.T. l_SD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
I_SD
Note
a. V_GS = 5 V for logic level devices
Fig. 20 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91932.
S17-0250-Rev. B, 20-Feb-17
6
Document Number: 91932
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000