SIHH28N60E Datasheet, PDF (1/7 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHH28N60E
Vishay Siliconix
E Series Power MOSFET
PowerPAK^® 8 x 8
4
1
2
3
3
Pin 4
Pin 1
Pin 2
Pin 3
N-Channel MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) typ. () at 25 °C
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
650
V_GS = 10 V
129
20
44
Single
0.085
FEATURES
• Completely lead (Pb)-free device
• Low figure-of-merit (FOM) R_on x Q_g
• Low input capacitance (C_iss)
• Reduced switching and conduction losses
• Ultra low gate charge (Q_g)
• Avalanche energy rated (UIS)
• Kelvin connection for reduced gate noise
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 8 x 8
SiHH28N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (T_J = 150 °C)
Pulsed drain current ^a
Linear derating factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single pulse avalanche energy ^b
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dV/dt ^c
T_J = 125 °C
E_AS
P_D
T_J, T_stg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 , I_AS = 5 A
c. I_SD  I_D, dI/dt = 100 A/μs, starting T_J = 25 °C
LIMIT
600
± 30
29
19
76
1.6
353
202
-55 to +150
70
13
UNIT
V
A
W/°C
mJ
W
°C
V/ns
S17-0250-Rev. B, 20-Feb-17
1
Document Number: 91932
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000