SI8808DB Datasheet, PDF (6/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
Si8808DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
P_DM
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 185 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
P_DM
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 330 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper)
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Document Number: 62547
6
S12-1766-Rev. A, 23-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000