SI8808DB Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
10
V_GS = 5 V thru 2.5 V
V_GS = 2 V
12
8
Si8808DB
Vishay Siliconix
9
V_GS = 1.5 V
6
3
0
0.0
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
0.16
V_GS = 1.5 V
0.12
V_GS = 1.8 V
6
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
500
400
C_iss
300
0.08
0.04
V_GS = 4.5 V
V_GS = 2.5 V
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8
I_D = 1 A
6
V_DS = 15 V
V_DS = 7.5 V
4
V_DS = 24 V
2
200
100
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V, 2.5 V, 1.8 V; I_D = 1 A
1.4
V_GS = 1.5 V, I_D = 0.5 A
1.2
1.0
0.8
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62547
For technical questions, contact: [e-mail]
www.vishay.com
S12-1766-Rev. A, 23-Jul-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000