SI5484DU Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si5484DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^-4
Notes:
P_DM
Single Pulse
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
Rt^2thJA
=
75
°C/W
3. T_JM - T_A = P_DM Z_thJA(t)
4. Surface Mounted
10 ^-3
10 ^-2
10 ^-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73589.
www.vishay.com
6
Document Number: 73589
S-81448-Rev. B, 23-Jun-08