SI5484DU Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
20
V_GS = 5 thru 2.5 V
32
16
Si5484DU
Vishay Siliconix
24
12
16
2V
8
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
0.035
0.030
0.025
0.020
0.015
V_GS = 2.5 V
V_GS = 4.5 V
0.010
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 11.4 A
8
6
V_DS = 10 V
V_DS = 16 V
4
2
0
0
8
16
24
32
40
Q _g - Total Gate Charge (nC)
Gate Charge
8
4
0
0.0
2500
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2000
C_iss
1500
1000
500
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
1.4 I_D = 7.6 A
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73589
S-81448-Rev. B, 23-Jun-08
www.vishay.com
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