SI4816DY Datasheet, PDF (6/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL-2
Gate Charge
10
V_DS = 15 V
8
I_D = 9.5 A
6
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 9.5 A
1.4
1.2
4
1.0
0.8
2
0.6
0
0
40
6
12
18
24
30
Q_g -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.4
--50 --25 0
25 50 75 100 125 150
T_J -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
T_J = 150_C
10
0.03
T_J = 25_C
0.02
0.01
I_D = 9.5 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD -- Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
--0.0
--0.2
--0.4
--0.6
--0.8
--1.0
--50 --25
0 25 50 75 100 125 150
T_J -- Temperature (_C)
0.00
0
2
4
6
8
10
V_GS -- Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (sec)
www.vishay.com
6
Document Number: 71121
S-41697—Rev. E, 20-Sep-04