SI4816DY Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
Channel-1
30
Channel-2
0.022 @ V_GS = 10 V
0.030 @ V_GS = 4.5 V
0.013 @ V_GS = 10 V
0.0185 @ V_GS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
I_D (A)
6.3
5.4
10
8.6
I_F (A)
2.0
FEATURES
D LITTLE FOOTr Plus Power MOSFET
D 100% R_g Tested
D₁
G_{1 1}
A/S_{2 2}
A/S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D2^/S1
6 ^D2^/S1
5 ^D2^/S1
Top View
Ordering Information:
Si4816DY
Si4816DY-T1 (with Tape and Reel)
Si4816DY—E3 (Lead (Pb)-Free)
Si4816DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
G₁
N-Channel 1
MOSFET
S₁/D₂
G₂
N-Channel 2
MOSFET
S₂
Schottky Diode
A
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol ^{10 secs Steady State 10 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
T_A = 25_C
T_A = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current^b
Single Pulse Avalanche Energy^b
L = 0.1 mH
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
20
6.3
5.3
10
7.7
5.4
4.2
8.2
6.2
30
40
1.3
0.9
2.2
1.15
12
25
7.2
31.25
1.4
1.0
2.4
1.25
0.9
0.64
1.5
0.8
--55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Starting date code W46BAA.
t ≤ 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJC
Document Number: 71121
S-41697—Rev. E, 20-Sep-04
Channel-1
Typ Max
72
90
100
125
51
63
Channel-2
Typ
Max
43
53
82
100
25
30
Schottky
Typ Max
48
60
80
100
28
35
Unit
_C/W
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