SI4728CY Datasheet, PDF (6/9 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs with Break-Before-Make

Si4728CY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Gate-to-Source Voltage (Q₁)
100
On-Resistance vs. Gate-to-Source Voltage (Q₂)
80
80
60
I_D = 10 A
40
20
60
I_D = 10 A
40
20
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Output Capacitance vs. Drain Voltage (Q₁)
2000
1600
1200
800
400
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
Q₂
1.4
I_D = 10 A
Q₁
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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6
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Output Capacitance vs. Drain Voltage (Q₂)
3000
2400
1800
1200
600
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Input V_IH vs. Junction Temperature
2.35
2.30
V_DD = 4.5 V
2.25
2.20
2.15
2.10
2.05
2.00
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 71286
S-03075—Rev. C, 03-Feb-03