SI4724CY Datasheet, PDF (6/8 Pages) Vishay Siliconix – N-Channel Synchronous MOSFETs with Break-Before-Make

Si4724CY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Gate-to-Source Voltage (Q₁)
80
Output Capacitance vs. Drain Voltage (Q₁ and Q₂)
800
700
60
600
500
I_D = 5 A
40
400
300
20
200
100
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Ambient Temperature
1.6
I_D = 5 A
1.4 V_GS = 4.5 V
1.2
I_CC vs. Frequency
16
14
V_IN = 12 V
V_DD = 5 V
DC = 25%
12
BOOT = 0.1 mF
I_LOAD = 1 A
10
1.0
8
6
0.8
4
0.6
2
0.4
- 50 - 25 0
25 50 75 100 125 150
T_A - Ambient Temperature (_C)
0
0
200
400
600
800
1000
Frequency (kHz)
Input Current vs. Junction Temperature
350
Source-Drain Diode Forward Voltage
10
300
I_DDQ @ IN = H
250
200
I_DDQ @ IN = L
150
T_J = 150_C
T_J = 25_C
100
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
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6
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V_SD - Source-to-Drain Voltage (V)
Document Number: 71863
S-03922—Rev. D, 19-May-03