SI4539ADY_05 Datasheet, PDF (6/8 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si4539ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PCHANNEL
Gate Charge
10
V_DS = 15 V
I_D = 4.9 A
8
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 4.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.8
0.6
I_D = 250 mA
0.4
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
I_D = 4.9 A
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
50
40
30
20
10
0
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Time (sec)
100 600
www.vishay.com
2-6
Document Number: 71131
S-03951—Rev. B, 26-May-03