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SI4539ADY_05 Datasheet, PDF (2/8 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET
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Si4539ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS = - 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VDS p - 5 V, VGS = - 10 V
VGS = 10 V, ID = 5.9 A
VGS = - 10 V, ID = - 4.9 A
VGS = 4.5 V, ID = 4.9 A
VGS = - 4.5 V, ID = - 3.7 A
VDS = 15 V, ID = 5.9 A
VDS = - 15 V, ID = - 4.9 A
IS = 1.7 A, VGS = 0 V
IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 5.9 A
Qgs
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
IF = - 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
1.0
V
P-Ch
- 1.0
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
-1
mA
5
P-Ch
-5
N-Ch
30
A
P-Ch
- 30
N-Ch
0.032 0.036
P-Ch
N-Ch
0.043 0.053
W
0.042 0.053
P-Ch
0.075 0.090
N-Ch
15
S
P-Ch
9
N-Ch
P-Ch
0.80
1.2
V
- 0.80
- 1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
0.5
P-Ch
5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
13
20
15
25
2.3
nC
4
2
2.0
2.2
W
12.6
6
12
7
15
14
25
10
20
30
60
ns
40
80
5
10
20
40
30
60
30
60
www.vishay.com
2-2
Document Number: 71131
S-03951—Rev. B, 26-May-03
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