SD553C30S50L Datasheet, PDF (6/8 Pages) Vishay Siliconix – Fast Recovery Diodes (Hockey PUK Version), 560 A

SD553C..S50L Series
Vishay High Power Products ^{Fast Recovery Diodes}
(Hockey PUK Version), 560 A
1E 4
1E 3
1000 ^{600 400 200 100}
1 50 0
2000
50 Hz
3000
4 00 0
6000
10 0 0 0
S D 55 3 C..S5 0 L Se rie s
Sinu soid al Pu ls e
T_C = 5 5°C , V _RRM = 1 5 0 0 V
tp
d v/dt = 1000V/us
1E 2
1E1
1E 2
1E3
1E 4
Pulse Basew idth (µs)
Fig. 16 - Frequency Characteristics
1E4
tp
1E3
1 00
200
400
600
10 0 0
50 H z
1 50 0
2 0 00
3000
40 0 0
6 00 0
1E2
1E 1
1E 2
SD 55 3C ..S5 0 L S er ie s
Trap ezoidal Pul se
T_C = 5 5°C, VRRM= 1 5 0 0 V
dv/ dt = 10 0 0 V/u s,
di/d t = 300A /us
1E 3
1E4
Pu lse Basew idth (µs)
Fig. 18 - Frequency Characteristics
1E4
tp
1E3
SD 5 5 3 C.. S5 0 L Se rie s
Sin uso id al Pu ls e
TJ = 1 25°C , V RRM = 15 0 0 V
d v/ d t = 1 0 0 0 V/ µ s
10 jo ules pe r p ulse
8
6
4
2
1
0.8
0 .6
0.4
1E2
1E1
1E 2
1E 3
1E 4
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
SD 553C..S50L Series
Tra pez oidal Pul se
T_J = 1 2 5°C , V _RRM= 1 5 0 0 V
dv/ d t = 100 0V / µs
di /d t = 100A /µs
1E3
tp
10 jo u le s pe r pulse
8
6
4
2
1
0 .8
0.6
0 .4
1E2
1E1
1E2
1E3
1E4
Pulse Basew idth (µs)
Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
tp
1E3
10 0
20 0
4 00
60 0
1000
15 0 0
50 H z
2 00 0
3 00 0
4000
6000
SD 5 5 3 C ..S 50 L Se ri e s
Tra pezoida l Pu lse
TC = 5 5° C, V RRM= 1 5 00 V
d v/d t = 1000V /u s,
d i/dt = 100A /u s
1E2
1E1
1E2
1E3
1E4
Pulse Basew idth (µs)
Fig. 20 - Frequency Characteristics
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Document Number: 93177
Revision: 14-May-08